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Theoretical Study of Magnetic Anisotropy in MgO-based Magnetic Tunnel Junctions
Vojáček, Libor ; Li,, Jing (referee) ; Chshiev,, Mairbek (advisor)
Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů).
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Magnetic multilayers for spintronics applications
Vaňatka, Marek ; Dvořák, Petr (referee) ; Urbánek, Michal (advisor)
Magnetic multilayers have applications as magnetic field sensors or magnetic memory cells. Mastering the methods of fabrication and characterization of the structures such as spin valve or magnetic tunnel junction is an important step towards more complicated spintronics devices. This work summarizes basic theory of magnetism, magnetotransport properties, and it describes basic applications of magnetic multilayers. The experimental part of this work deals with the sample preparation by ion beam sputtering (IBS), ion beam assisted deposition (IBAD), and characterization of prepared multilayers by measuring anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), or tunnel magnetoresistance (TMR).
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Ultrafast laser spectroscopy of antiferromagnets
Saidl, Vít ; Němec, Petr (advisor) ; Kužel, Petr (referee) ; Hamrle, Jaroslav (referee)
This work is dedicated to the study of two antiferromagnetic materials that are suitable for use in spintronic devices. In series of FeRh samples we studied the transition temperature between the antiferromagnetic and ferromagnetic phases. We developed a method based on material optical response for a quick determination of this temperature, which enabled us to study with a spatial resolution of 1 μm a magnetic inhomogeneity of prepared samples.We also developed a method for a determination of the Néel temperature and the magnetization easy axis position in thin films prepared from compensated antiferromagnetic metal. We successfully applied this method on an uniaxial sample of CuMnAs and we discussed its applicability for a research of samples with a biaxial magnetic anisotropy.
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Theory of spin-dependent transport in magnetic solids
Wagenknecht, David ; Turek, Ilja (advisor) ; Minár, Ján (referee) ; Šipr, Ondřej (referee)
of doctoral thesis Theory of spin-dependent transport in magnetic solids David Wagenknecht Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University 2019 Theoretical and ab initio description of realistic material behavior is complicated and combinations of various scattering mechanisms or temperature effects are often neglected, although experimental samples contain impurities and modern electronics work at finite temperatures. In order to remove these knowledge gaps, the alloy analogy model is worked out in this thesis and implemented within the fully relativistic tight- binding linear-muffin-tin orbital method with the coherent potential approximation. This first-principles framework is shown to be robust and computationally efficient and, consequently, employed to investigate bulk solids and their spintronic applications. Unified effect of phonons, magnons, and alloying gives agreement with literature for temperature-dependent electrical transport (longitudinal and anomalous Hall resistivities) and scattering mechanisms are explained from electronic structures. Moreover, novel data help to identify defects in real samples and experimentally hardly accessible quantities are presented, such as spin polarization of electrical current. Calculated results for both zero...
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Optical and magneto-optical spectroscopy of materials with antiferromagnetic interaction
Križanová, Katarína ; Zázvorka, Jakub (advisor) ; Čermák, Petr (referee)
Title: Optical and magneto-optical spectroscopy of materials with antiferro- magnetic interaction Author: Bc. Katarína Križanová Department: Institute of Physics of Charles University Supervisor: RNDr. Jakub Zázvorka, Ph.D., Institute of Physics of Charles University Abstract: One of the goals of spintronic research is the efficient external con- trol of magnetic moment. Non-collinear antiferromagnets in the antiperovskite structure, such as Mn3NiN, show a piezomagnetic effect that can be used to utilize these materials in applications. In the strain free state, the material ex- hibit zero net magnetic moment. Using strain induced by a lattice constant mismatch between the thin layer and a substrate on which the thin film is applied on a non-zero net magnetic moment can be registered. Magneto-optical Kerr effect spectroscopy is used to investigate the non-collinear magnetic thin films. The effect of two substrate layers with resulting opposite sign of strain influencing the magnetic ordering of the antiperovskite material is studied with respect to sample temperature. Results show comparable spectral dependence with opposite sign of the Kerr effect caused by the opposite direc- tion of net magnetization moments. Ellipsometry measurements depending on sample orientation are performed to study the material...
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Spin dynamics in GaAs-based semiconductor structures
Schmoranzerová, Eva ; Němec, Petr (advisor) ; Postava, Kamil (referee) ; Kužel, Petr (referee)
This work is dedicated to the study of spin dynamics in systems based on the semiconductor gallium arsenide (GaAs) that are suitable for use in spintronic devices. We explored two types of model structures using experimental methods of ultrafast laser spectroscopy and transport measurements. In the ferromagnetic semiconductor (Ga,Mn)As, we investigated laser-induced magnetization precession. We found out that transfer of both energy and angular momentum from the circularly polarized laser light can trigger magnetization precession, the latter one being identified as a new phenomenon, the "optical spin transfer torque". Furthermore, we demonstrate the possibility to control the energy-transfer-induced magnetization dynamics both optically and electrically using piezo-stressing. When dealing with purely non-magnetic structures for spintronics, we studied the Spin-Injection Hall Effect (SIHE) in GaAs/AlGaAs heterostructures with a special type of spin- orbit (SO) coupling that are lithographically patterned to create nanodevices. We managed to observe precession of the electron spin in the SO field directly in the space domain by extending the original detection method. This finding, together with the direct detection of a pure spin current, helped to propose a working spin Hall effect transistor.
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Theoretical Investigation of Low-dimensional Magnetic Materials
Li, Shuo ; Grajciar, Lukáš (advisor) ; Frauenheim, Thomas (referee) ; Jelínek, Pavel (referee)
Low-dimensional (D) materials, such as graphene, transition metal dichalcogenides and chalcogenide nanowires, are attractive for spintronics and valleytronics due to their unique physical and chemical properties resulting from low dimensionality. Emerging concepts of spintronics devices will greatly benefit from using 1D and 2D materials, which opens up new ways to manipulate spin. A majority of 1D and 2D materials is non-magnetic, thus their applications in spintronics are limited. The exploration, design and synthesis of new 1D and 2D materials with intrinsic magnetism and high spin-polarization remains a challenge. In addition, the valley polarization and spin-valley coupling properties of 2D materials have attracted great attention for valleytronics, which not only manipulates the extra degree of freedom of electrons in the momentum space of crystals but also proposes a new way to store the information. The computational investigation of magnetic and electronic properties of low-dimensional materials is the subject of this thesis. We have systematically investigated geometric, electronic, magnetic and valleytronic properties of several 2D and 1D materials by using the density functional theory. These investigations not only theoretically show rich and adjustable magnetic properties of...
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Theoretical Study of Magnetic Anisotropy in MgO-based Magnetic Tunnel Junctions
Vojáček, Libor ; Li,, Jing (referee) ; Chshiev,, Mairbek (advisor)
Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů).
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Nanostructures and Materials for Antiferromagnetic Spintronics
Reichlová, Helena ; Novák, Vít (advisor)
This thesis is focused on two open problems of antiferromagnetic (AFM) spintronics: manipulation of AFM coupled moments and development of new materials combining AFM and semiconductor properties. We present three particular methods enabling AFM moments manipulation. The rst method, based on the exchange spring effect in an AFM/FM double layer, strongly de- pends on the AFM layer thickness and temperature. We systematically vary these two parameters and identify the conditions when AFM moments can be manip- ulated. By the second method, cooling an AFM in a magnetic eld through the critical temperature, we prove the concept of a fully AFM-based (containing no FM) spintronic device. The last studied method is based on current induced effects in nanostructures containing an AFM. By systematic study of samples with and without AFM we demonstrate the ability of AFM moments to absorb a current induced torque. Relying neither on a FM nor on cooling in magnetic eld, this method represents an elegant way of AFM moments manipulation. In the second experimental part new materials for AFM spintronics are discussed, and one representative example, CuMnAs, is studied in detail. Characterization of bulk and epitaxial CuMnAs is presented and rst spintronic functionality is shown. Powered by TCPDF (www.tcpdf.org)
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